金属氧化物压敏电阻是电力和电子系统的关键保护器件，直接决定系统运行的安全可靠性。本书系统介绍了氧化锌等压敏电阻的基础研究、制备工艺、性能调控及应用进展，包括导电及老化机理、微结构电特性、微结构测试及微结构仿真分析、、高梯度低残压氧化压敏陶瓷、氧化钛及氧化锡等其他体系压敏陶瓷的研究进展等，构建了压敏电阻微结构特性与宏观特性之间的关联性。
本书可供高校和科研院所电气工程、微电子、材料等专业的师生以及电力传输、电气设备制造等行业的工程技术人员阅读和参考。

Preface
Acknowledgments
1 Introduction of Varistor Ceramics
1.1 ZnO Varistors
1.2 Fabrication of ZnO Varistors
1.2.1 Preparation of Raw Materials
1.2.2 Sintering of ZnO Varistors
1.3 Microstructure
1.4 Typical Parameters of ZnO Varistors
1.5 History of ZnO Varistors
1.6 Applications of ZnO Varistors
1.7 Alternative Varistor Ceramics
1.8 Ceramic-Polymer Composite Varistors
References
2 Conduction Mechanisms of ZnO Varistors
2.1 Introduction
2.2 Basic Concepts in Solid-State Physics
2.2.1 Atomic Energy Level and Energy Band of Crystal
2.2.2 Metal, Semiconductor, and Insulator
2.2.3 Characteristics of Fermi-Dirac Function
2.2.4 Impurity and Defect Energy Level
2.3 Energy Band Structure of a ZnO Varistor
2.3.1 Energy Band Structure of a ZnO Grain
2.3.2 DSB of a ZnO Varistor
2.3.3 Microscopic Origin of DSB
2.3.4 Asymmetric I-V Characteristics of the DSB
2.4 Conduction Mechanism of a ZnO Varistor
2.4.1 Conduction Model Based on Thermionic Emission Process
2.4.2 Minority Carrier Generation Process
2.4.3 The Bypass Effect Model
2.5 Dielectric Characteristics of a ZnO Varistor
2.5.1 Explanation to Dielectric Properties of a ZnO Varistor
2.5.2 Effect of Interfacial Charge Relaxation on Conducting Behavior of ZnO Varistors Under Time-Varying Electric Fields
2.5.3 Determination of Barrier Height and Related Parameters
2.5.4 Determination of Deep Donor Level in the ZnO Varistor
2.5.5 Determination of Grain and Grain Boundary Conductivity
References
3 Tuning Electrical Characteristics of ZnO Varistors
3.1 Introduction
3.2 Liquid-Phase Fabrication
3.2.1 Microstructure of ZnO Varistor
3.2.2 Polymorph of Bismuth Oxide
3.2.3 Influence of Bi2O3 Concentration
3.2.4 Volatilization of Bismuth Oxide
3.3 Preparing and Sintering Techniques
3.3.1 Fabrication
3.3.2 Fabrication Stages
3.3.3 Effect of Pores
3.4 Role of Oxygen at the Grain Boundary
3.5 Dopant Effects
3.5.1 Effects of Additives
3.5.2 Donor Dopants
3.5.3 Acceptor Dopants
3.5.4 Amphoteric Dopants
3.5.4.1 Monovalent Dopants
3.5.4.2 Trivalent Dopants
3.5.5 Effects of Rare Earth Oxides
3.5.6 Dopants for Improving the Stability
3.5.7 Evidence for Hydrogen as a Shallow Donor
3.6 Role of Inversion Boundaries
3.7 High Voltage Gradient ZnO Varistor
3.8 Low Residual Voltage ZnO Varistor
3.8.1 Residual Voltage Ratio
3.8.2 Low Residual Voltage ZnO Varistors by Doping Al
3.8.3 Low Residual Voltage ZnO Varistors by Doping Ga
3.8.4 Low Residual Voltage ZnO Varistors with High Voltage Gradient
References
4 Microstructural Electrical Characteristics of ZnO Varistors
4.1 Introduction
4.2 Methods to Determine Grain Boundary Parameters
4.2.1 The Indirect Method
4.2.2 The Direct Microcontact Methods
4.3 Statistical Characteristics of Grain Boundary Parameters
4.3.1 Nonuniformity of Barrier Voltages
4.3.2 Distribution of Barrier Voltage
4.3.3 Distribution of Nonlinear Coefficient
……
5 Simulation on Varistor Ceramics
6 Breakdown Mechanism and Energy Absorption Capability of ZnO Varistor
7 Electrical Degradation of ZnO Varistors
8 Praseodymium/Vanadium/Barium-Based Zno Varistor Systems
9 Fabrications of Low-Voltage ZnO Varistors
10 Titanium-Based Dual-function Varistor Ceramics
11 Tin Oxide Varistor Ceramics of High Thermal Conductivity
12 WO3-Based Varistor Ceramics of Low Breakdown Voltage
Index