本书为英文图书，研究了氮化铝缓冲层对氮化镓外延层表面形貌和晶体质量的影响，讨论了氮化镓异质外延生长中镓扩散到硅衬底中并溶解形成镓—硅合金的途径，最终经过优化得以实现利用等离子辅助分子束外延在硅（111）衬底上生长出无微晶的光滑氮化镓外延层。作者在优化过程中发现了非晶氮化硅薄层在镓/硅扩散中的阻挡缓冲作用，并利用此缓冲层优化了氮化铝镓的外延生长，最终实现了总厚度高达1.4μm氮化镓和氮化铝镓无裂纹外延层的生长。作者在研究中，利用优化生长的外延层，成功地在硅衬底上生长了应用于紫外光电探测器的多层结构，并详细研究了器件尺寸对紫外光响应性的影响；利用优化的紫外探测器机构，获得了应用于紫外/红外双波段光电探测器的多层结构并取得了0.01 A/W紫外光电响应和在4.52μm波长峰值上的近红外光电响应。书稿对这些研究过程与结果做了学理性阐释。

郑益，江苏常州人，本科毕业于吉林大学微电子系，硕士、博士就读于新加坡南洋理工大学电气与电子工程学院，师从K．RadhaHshnan副教授，主攻III-V族氮化物宽禁带半导体材料外延工艺，半导体光电器件、高迁移率晶体管制造工艺。在博士就读期间，在硅基氮化物红外光电探测器研发方面取得了突破进展，第一次成功获得了具有中红外光电响应的硅基氮化镓红外光电探测器。目前就职于常州工学院光电工程学院，主要研究III-V族宽禁带薄膜材料。

Chapter 1 Introduction
1.1 CaN material properties
1.2 Substrates for CaN epitaxial growth
1.3 AlGaN based heterostructure for photodetector application
1.4 Challenges for GaN and AlGaN growth on Si (111)
1.5 Motivation and objectives
1.6 Book organization
Chapter 2 Literature Review
2.1 AlGaN and GaN growth optimization
2.1.1 AlNgrowth onSi (111)
2.1.2 GaNgrowthonSi (111)
2.1.3 AlxGa1-xN growth on Si (lll)
2.2 Si doping in GaN and AlGaN
2.3 AlGaN and GaN based UV photodetector
2.3.1 Junction based UV photodetector
2.3.2 Metal-semiconductor-metal ultraviolet detector
2.3.3 A1GaN/GaN photoconductive ultraviolet detector
2.3.4 Other types of UV photodetectors
2.4 AlGaN based ultraviolet/infrared dual band detector on Si ( 111 )
2.5 GaN and AlGaN etching
Chapter 3 Growth and Characterization Techniques
3.1 Growth technique for GaN and AlGaN
3.2 Device fabrication techniques for GaN and AlGaN based photodetectors
3.2.1 Plasma-enhanced chemical vapor deposition (PECVD)
3.2.2 Photolithography
3.2.3 Reactive-ion etching (RIE)
3.2.4 Inductively Coupled Plasma reactive-ion etching (ICP-RIE)
3.2.5 E-Beam evaporation
3.2.6 Rapid thermal processing (RTP)
3.3 Characterization techniques
3.3.1 High resolution X-ray diffraction
3.3.2 Atomic force microscopy (AFM)
3.3.3 Secondary ion mass spectroscopy (SIMS)
3.3.4 Micro-Raman spectroscopy
3.3.5 Scanning electron microscopy (SEM)
3.3.6 Hall-Effect measurement
3.3.7 Photoresponsivity measurement
Chapter 4 Optimization oi GalN/AIN on Si (111) Substrate
4.1 Growth of AIN layer
4.2 Growth optimization of GaN/AIN
4.2.1 Growth of GaN/AIN on Si ( 111 ) by PA-MBE
4.2.2 Characterization of GaN/A1N on Si ( 111 )
4.3 Si doping of GaN layer
4.4 Summary
Chapter 5 Optimization of AlGaN/AIN/SiNx on Si (111) Substrate by PA-MBE
5.1 Growth of AlGaN layer by PA-MBE
5.1.1 Surface nitridation of Si
5.1.2 A1N growth
5.1.3 GaN and A1GaN growth
5.1.4 Characterization of A1N on Si ( 111 ) with surface nitridation
5.1.5 Characterization of 2D GaN and A1GaN on A1N/Si ( 111 )
5.2 Si doping of AlGaN layer
5.3 Summary
Chapter 6 AlGaN based UV photodetector
6.1 Growth of AlGaN/GaN multi-layer structure for UV photodetector applications
6.2 Characterization of AlGaN/GaN multilayer structure
6.3 Device fabrication of UV photodetector
6.3.1 SiO2 deposition by PECVD
6.3.2 Photolithography of mesa pattern on SiO
6.3.3 RIE of SiOz for hard mask and cleaning of photoresist
6.3.4 ICP-RIE for detector mesa
6.3.5 Hard mask removal by BOE
6.3.6 Photolithography for metal contacts
6.3.7 Metal deposition for electrodes by e-Beam evaporation
6.3.8 Photoresist lift off
6.3.9 Annealing for ohmic contact
6.3.10 Metal deposition for wire bonding by e-Beam evaporation
6.4 Device characterization of UV photodetector
6.4.1 I-V measurement
6.4.2 UV Photoresponsivity measurement
6.5 Summary
Chapter 7 AlGaN based UV/IR Dual Band Photodetector
7.1 Growth of AlGaN/GaN multilayer structure for UV/IR dual band photodetector
7.2 Characterization of AlGaN/GaN multilayer structure
7.3 Device characterization of UV/IR dual band photodetector
7.3.1 I-V measurement
7.3.2 UV Photoresponsivity measurement
7.3.3 IR response measurement of photodetector
7.4 Summary
Chapter 8 Conclusions and Recommendations
8.1 Conclusions
8.2 Recommendations for further work
8.2.1 AIN buffer layer
8.2.2 GaN/AlGaN growth optimization on AIN
8.2.3 UV photodetector with thin SiNx
8.2.4 UV/IR dual band photodetector with three electrodes design
References
Abbreviations