本书主要研究了材料表面及从表面到几十乃至100纳米深的结构与构成。主要讨论了用入射粒子和光子来量化结构并进行成分和深度分析的材料表征方法以及详细介绍了各种分析和扫描探针显微技术。本书可供物理学工作者参考学习。

　　现代科学技术（从材料科学到集成电路）已深入到纳米层次。从薄膜到场效应传感器，研究的重点是如何把尺度从微米量级减小到纳米量级。纳米薄膜分析一书主要研究了材料表面及从表面到几十乃至100纳米深的结构与构成。主要讨论了用入射粒子和光子来量化结构并进行成分和深度分析的材料表征方法。　　本书讨论了通过入射光子或粒子刻蚀纳米材料来表征材料的方法，入射的粒子能够激发出可测的粒子或光子，这正是表征材料的依据，纳米尺度材料分析实验会用到大量入射粒子与待测粒子束的相互作用。其中较重要的有原子碰撞、卢瑟福背散射、离子遂道、衍射、光子吸收、辐射与非辐射阳县跃迁以及核反应。本书详细介绍了各种分析和扫描探针显微技术。

Preface

1. An Overview：Concepts，Units，and the Bohr Atom

 1.1 Introduction

 1.2 Nomenclature

 1.3 Energies，Units，and Particles

 1.4 Particle-Wave Duality and Lattice Spacing

 1.5 The Bohr Model

 Problems

2. Atomic Collisions and Backscattering Spectrometry

 2.1 Introduction

 2.2 Kinematics of Elastic Collisions

 2.3 Rutherford Backscattering Spectrometry

 2.4 Scattering Cross Section and Impact Parameter

 2.5 Central Force Scattering

 2.6 Scattering Cross Section：Two-Body

 2.7 Deviations from Rutherford Scattering at Low and High Energy

 2.8 Low-Energy Ion Scattering

 2.9 Forward Recoil Spectrometry

 2.10 Center of Mass to Laboratory Transformation

 Problems

3. Energy Loss of Light Ions and Backscattering Depth Profiles

 3.1 Introduction

 3.2 General Picture of Energy Loss and Units of Energy Loss

 3.3 Energy Loss of MeV Light Ions in Solids

 3.4 Energy Loss in Compounds Bragg's Rule

 3.5 The Energy Width in Backscattering

 3.6 The Shape of the Backscattering Spectrum

 3.7 Depth Profiles with Rutherford Scattering

 3.8 Depth Resolution and Energy-Loss Straggling

 3.9 Hydrogen and Deuterium Depth Profiles

 3.10 Ranges of H and He Ions

 3.11 Sputtering and Limits to Sensitivity

 3.12 Summary of Scattering Relations

 Problems

4. Sputter Depth Profiles and Secondary Ion Mass Spectroscopy

 4.1 Introduction

 4.2 Sputtering by Ion Bombardment—General Concepts

 4.3 Nuclear Energy Loss

 4.4 Sputtering Yield

 4.5 Secondary Ion Mass Spectroscopy (SIMS)

 4.6 Secondary Neutral Mass Spectroscopy (SNMS)

 4.7 Preferential Sputtering and Depth Profiles

 4.8 Interface Broadening and Ion Mixing

 4.9 Thomas-Fermi Statistical Model of the Atom

 Problems

5. Ion Channeling

 5.1 Introduction

 5.2 Channeling in Single Crystals

 5.3 Lattice Location of Impurities in Crystals

 5.4 Channeling Flux Distributions 89

 5.5 Surface Interaction via a Two-Atom Model

 5.6 The Surface Peak

 5.7 Substrate Shadowing：Epitaxial Au on Ag(111)

 5.8 Epitaxial Growth

 5.9 Thin Film Analysis

 Problems

6. Electron-Electron Interactions and the Depth Sensitivity of Electron Spectroscopies

 6.1 Introduction

 6.2 Electron Spectroscopies：Energy Analysis

 6.3 Escape Depth and Detected Volume

 6.4 Inelastic Electron-Electron Collisions

 6.5 Electron Impact Ionization Cross Section

 6.6 Plasmons

 6.7 The Electron Mean Free Path

 6.8 Influence of Thin Film Morphology on Electron Attenuation

 6.9 Range of Electrons in Solids

 6.10 Electron Energy Loss Spectroscopy (EELS)

 6.11 Bremsstrahlung

 Problems

7. X-ray Diffraction

 7.1 Introduction

 7.2 Bragg's Law in Real Space

 7.3 Coefficient of Thermal Expansion Measurements

 7.4 Texture Measurements in Polycrystalline Thin Films

 7.5 Strain Measurements in Epitaxial Layers

 7.6 Crystalline Structure

 7.7 Allowed Reflections and Relative Intensities

 Problems

8. Electron Diffraction

 8.1 Introduction

 8.2 Reciprocal Space

 8.3 Laue Equations

 8.4 Bragg's Law

 8.5 Ewald Sphere Synthesis

 8.6 The Electron Microscope

 8.7 Indexing Diffraction Patterns

 Problems

9. Photon Absorption in Solids and EXAFS

 9.1 Introduction

 9.2 The Schrodinger Equation

 9.3 Wave Functions

 9.4 Quantum Numbers，Electron Configuration,and Notation

 9.5 Transition Probability

 9.6 Photoelectric Effect Square-Well Approximation

 9.7 Photoelectric Transition Probability for a Hydrogenic Atom

 9.8 X-ray Absorption

 9.9 Extended X-ray Absorption Fine Structure (EXAFS)

 9.10 Time-Dependent Perturbation Theory

 Problems

10. X-ray Photoelectron Spectroscopy

 10.1 Introduction

 10.2 Experimental Considerations

 10.3 Kinetic Energy of Photoelectrons

 10.4 Photoelectron Energy Spectrum

 10.5 Binding Energy and Final-State Effects

 10.6 Binding Energy Shifts—Chemical Shifts

 10.7 Quantitative Analysis

 Problems

11. Radiative Transitions and the Electron Microprobe

 11.1 Introduction

 11.2 Nomenclature in X-Ray Spectroscopy

 11.3 Dipole Selection Rules

 11.4 Electron Microprobe

 11.5 Transition Rate for Spontaneous Emission

 11.6 Transition Rate for Kα Emission in Ni

 11.7 Electron Microprobe：Quantitative Analysis

 11.8 Particle-Induced X-Ray Emission (PIXE)

 11.9 Evaluation of the Transition Probability for Radiative Transitions

 11.10 Calculation of the Kβ/Kα Ratio

 Problems

12. Nonradiative Transitions and Auger Electron Spectroscopy

 12.1 Introduction

 12.2 Auger Transitions

 12.3 Yield of Auger Electrons and Fluorescence Yield

 12.4 Atomic Level Width and Lifetimes

 12.5 Auger Electron Spectroscopy

 12.6 Quantitative Analysis

 12.7 Auger Depth Profiles

 Problems

13. Nuclear Techniques：Activation Analysis and Prompt Radiation Analysis

 13.1 Introduction

 13.2 Q Values and Kinetic Energies

 13.3 Radioactive Decay

 13.4 Radioactive Decay Law

 13.5 Radionuclide Production

 13.6 Activation Analysis

 13.7 Prompt Radiation Analysis

 Problems

14. Scanning Probe Microscopy

 14.1 Introduction

 14.2 Scanning Tunneling Microscopy

 14.3 Atomic Force Microscopy

Appendix 1. Km for 4He+ as Projectile and Integer Target Mass

Appendix 2. Rutherford Scattering Cross Section of the Elements for 1 MeV4Hei

Appendix 3. 4He+ Stopping Cross Sections

Appendix 4. Electron Configurations and Ionization Potentials of Atoms

Appendix 5. Atomic Scattering Factors

Appendix 6. Electron Binding Energies

Appendix 7. X-Ray Wavelengths (nm)

Appendix 8. Mass Absorption Coefficient and Densities

Appendix 9. KLL Auger Energies (eV)

Appendix 10. Table of the Elements

Appendix 11. Table of Fluoresence Yields for K，L，and M Shells

Appendix 12. Physical Constants，Conversions，and Useful Combinations

Appendix 13. Acronyms

Index