本书深入地介绍了半导体器件的原理和技术。本书括三个部分：半导体物理和器件，半导造过程和半导体器装和测试。第一部分主要介绍半导体物理基础、二极管、双极晶体管、MOS场效应晶体率MOSFET、晶闸管、IGBT、无源器件和SPICE模型。第二部分主要介绍半导体工艺技术、半导体工艺模拟和薄膜制备技术。第三部分主要介绍半导体封装、测试与模拟技术。这些内容将一步掌握半导体器件的分析、设计、制造、封装和测试的基本理论和方法奠定坚实的基础。

SECTION Ⅰ Semiconductor Physics and Devices
Chapter 1 Semiconductor physics foundation
1.1 Semiconductor materials
1.2 Semiconductor structure
1.3 Semiconductor defects
1.4 Energy band of semiconductor
1.5 Fermi level
1.6 Carrier concentration of semiconductor
1.7 Carrier motion of semiconductor
1.7.1 Carrier drift
1.7.2 Carrier diffusion
1.7.3 Carrier recombination
Exercises
References
Chapter 2 Diode
2.1 Basic structure of diode
2.2 Formation of pn junction and impurity distribution
2.3 Equilibrium pn junction
2.3.1 Formation of space charge region
2.3.2 Energy band of pn junction
2.3.3 Contact potential difference
2.3.4 Space charge region characteristics
2.3.5 Electric field and width of space charge region
2.4 Bias characteristics of diodes
2.4.1 Forward bias
2.4.2 Reverse bias
2.5 Influencing factors of diode DC characteristics
2.5.1 Recombination current and generation current in space charge region
2.5.2 Surface effect
2.5.3 Series resistance effect
2.5.4 Large injection effect
2.5.5 Temperature effect
2.6 Breakdown characteristics of diode
2.6.1 Avalanche breakdown
2.6.2 Tunnel breakdown
2.6.3 Thermoelectric breakdown
2.7 Switching characteristics of diode
Exercises
References
Chapter 3 Bipolar junction transistor
3.1 Introduction of BJT
3.2 Basic architecture of bipolar transistor
3.2.1 Alloy transistor
3.2.2 Alloy diffusion transistor
3.2.3 Planar transistor
3.2.4 Mesa transistor
3.3 Amplification of bipolar junction transistor
3.3.1 Carrier transmisson characteristics
3.3.2 Current amplification coefficient
3.3.3 Amplification conditions
3.4 Characteristic curve of bipolar transistor
3.4.1 Common base characteristic curve
3.4.2 Common emitter characteristic curve
3.5 Reverse current and breakdown voltage characteristics
3.5.1 Reverse current
3.5.2 Breakdown voltage
3.6 Base resistance
3.6.1 Concept of base resistance
3.6.2 Base resistance of comb transistor
3.6.3 Base resistance of circular transistor
3.7 Switching characteristics of bipolar junction transistor
3.7.1 On state and off state
3.7.2 Transient switching characteristics
Exercises
References
Chapter 4 MOS field effect transistor
4.1 Basic structure, principle and classification of MOSFET
4.1.1 Basic structure of MOSFET
4.1.2 Operating principle of MOSFET
4.1.3 Classification of MOSFET
4.2 Threshold voltage of MOSFET
4.2.1 Charge distribution in MOS structure
4.2.2 Threshold voltage of ideal MOSFET
4.2.3 Threshold voltage of actual MOSFET
4.3 DC characteristics of MOSFET
4.3.1 Operating characteristics of MOSFET
4.3.2 Breakdown characteristics of MOSFET
4.4 Small signal parameters and frequency characteristics of MOSFET
4.4.1 Small signal parameters of MOSFET
4.4.2 Frequency characteristics of MOSFET
4.5 Secondorder effects of MOSFET
4.5.1 Nonconstant mobility effect
4.5.2 Bulk charge effect
4.5.3 Short channel effect
4.5.4 Narrow channel effect
4.6 Switching characteristics of MOSFET
4.6.1 Transient switching delay
4.6.2 Calculation of switching time
Exercises
References
Chapter 5 Power MOSFET
5.1 Introduction
5.2 Structure of power MOSFET devices
5.3 Channel characteristics
5.4 Conduction loss
5.5 Switching characteristics
5.6 Selection of power MOSFET devices
Exercises
References
Chapter 6 Thyristor
6.1 Introduction
6.2 Device structure and working principle
6.3 IV characteristics of thyristor
6.3.1 Static characteristics
6.3.2 Dynamic characteristics
6.4 Conduction characteristics
6.5 Shutdown characteristics
6.5.1 Interrupt anode current