本书以作者及其研究团队多年的研究成果为基础，系统地介绍了Ⅲ族氮化物发光二极管的材料外延、芯片制作、器件封装和系统应用，内容集学术性与实用性为一体。全书共12章，内容包括：Ⅲ族氮化物LED的基本原理、材料性质及外延生长理论，InGaN/GaN多量子阱材料及蓝、绿光LED，AlGaN/GaN多量子阱材料及紫外LED，Ⅲ族氮化物LED量子效率提升技术、关键制备工艺、封装技术及可靠性分析，LED的应用，最后介绍了当前氮化物LED的一些研究前沿和热点。本书适合从事氮化物发光材料及半导体照明相关专业学者、相关的企业从业人员，科研院所研究人员等阅读参考。

1 Introduction
References
2 Basic Principles of LED
2.1 LED Luminescence Principle
2.1.1 History and Principle of Lighting Source
2.1.2 p-n Junction and the Principle of LED Luminescence
2.2 Radiation and Non-radiation Recombination
2.3 LED Optical and Electrical Characteristics
2.3.1 LED Quantum Efficiency
2.3.2 Radiation Spectrum
2.3.3 Basic Photometric Concepts in LED
2.3.4 Electrical Characteristics of LED
2.4 Principle of White LED
2.4.1 The Principle of Three Primary Colors and Addition of Light
2.4.2 The Realization Method of White LED
References
3 Properties and Testing of Group Ⅲ-Nitride LED Materials
3.1 Crystal Structure and Band Structure of Group Ⅲ Nitride
3.1.1 Crystal Structure
3.1.2 Band Structure
3.2 Polarization Effect of Group Ⅲ Nitride Materials
3.2.1 Polarization Effect
3.2.2 Influence of Polarization Effect
3.3 Doping of Group Ⅲ-Nitride LED Materials
3.3.1 Doping of Nitride LED Materials
3.4 Test and Analysis of the Properties of Group Ⅲ Nitride Materials
3.4.1 Structural and Morphological Analysis
3.4.2 Surface and Film Composition Analysis
3.4.3 Other Photoelectric Test Methods
References
4 Epitaxial of Ⅲ-Nitride LED Materials
4.1 Basic Models of Epitaxial
4.1.1 3-D Growth Mode (Volmer-Weber Mode)
4.1.2 2-D Growth Mode (Frank-Vander Merwe Mode)
4.1.3 2-D and 3-D Mixed Growth Mode(Stranski-Krastanob Mode)
4.2 Substrate for Epitaxial Growth of Ⅲ-Nitride LEDs(Sapphire/Si/SiC/LiA1Oz/GaN)
4.3 Group Ⅲ Nitride LED Epitaxial Technology
4.3.1 LPE Method
4.3.2 MBE Method
4.3.3 MOCVD Method
4.3.4 HVPE Method
4.4 Two-Step Growth Method for MOCVD Grown Nitride Materials
4.4.1 Surface Dynamics for Film Growth
4.4.2 Two-Step Growth Program for GaN/Sapphire by MOCVD
4.5 Influence of Growth Conditions on Epitaxial Layer Quality
of Group Ⅲ Nitride Materials
4.5.1 Effect of Buffer Layer Growth Conditions on Material Quality
4.5.2 Effect of Rough Layer Growth Conditions
4.6 Epitaxial Technology of High Quality GaN on SiC Substrate
4.6.1 Basic Properties of SiC
4.6.2 Nucleation and Growth of GaN on SiC Substrate
4.6.3 Roots of GaN Stress on SiC Substrates
References
5 InGaN/GaN Multiple Quantum Wells Materials as Well
as Blue and Green LEDs
5.1 Introduction to InGaN Material System
5.2 Polarization Effects in InGaN/GaN Multiple Quantum
Wells Materials
5.2.1 Polarity of GaN-Based Materials
5.2.2 Spontaneous Polarization and Piezoelectric Polarization
5.3 Quantum-Confined Stark Effect
5.3.1 Effect on Transition Energy Levels
5.3.2 Effect on Luminous Intensity
5.4 Carrier Localization in InGaN/GaN Multiple Quantum Wells
5.5 Green LED and Non-polar, Semi-polar LED
5.5.1 Polar Surface High in Composition Green LEDs
5.5.2 Semi-polar and Non-polar Materials
5.5.3 Research Progress on Semi-polar and Non-polar LEDs
References
6 AIGaN-Based Multiple-Quantum-Well Materials and UV LEDs
6.1 Introduction of A1GaN Material System
6.2 Optical and Electrical Properties of A1GaN Materials
6.3 Epitaxial Growth and Doping Techniques for A1GaN Materials
6.4 Structure Design and Fabrication of UV LEDs
References
7 Ⅲ-Nitride LED Quantum Efficiency Improvement
Technology
7.1 Three Structures of LED
7.2 Internal Quantum Efficiency Improvement Technology
7.2.1 Homo-Epitaxial Growth of GaN
7.2.2 Multiple Quantum Wells
7.2.3 Active Region Doping
7.2.4 Electronic Barrier Layer
7.3 Light Extraction Efficiency Improvement Technology
7.3.1 Patterned Sapphire Substrate
7.3.2 Surface Roughening
7.3.3 Reflector
7.3.4 Flip-Chip Structure
7.3.5 Photonic Crystal
7.4 Current Injection Efficiency Improvement Technology
7.4.1 Curr