化合物半导体加工中的表征一书是为使用化合物半导体材料与设备的科学家与工程师准备的，他们并不是表征专家。在研发与GaAs、GaA1As、LnP及HgCdTe基设备的制造中通常使用的材料与工艺提供常见的分析问题实例。这本布伦德尔、埃文斯、麦克盖尔编著的《化合物半导体加工中的表征》讨论了各种表征技术，深入了解每种技术是如何单独或结合使用来解决与材料相关的问题。这本书有助于选择并应用适当的分析技术在材料与设备加工的各个阶段，如：基体处理、外延生长、绝缘膜沉积、接触组、掺杂剂的引入。

Preface to the Reissue of the Materials Characterization Series 

Preface to Series 

Preface to the Reissue of Characterization of Compound

Semiconductor Processing 

Preface xiii

Contributors xv

CHARACTERIZATION OF III-V THIN FILMS FOR ELECTRONIC DEVICES

 1.1 Introduction 1

 1.2 Surface Characterization of GaAs Wafers 2

Dislocations 3, Surface Composition and Chemical State 4

 1.3 Ion Implantation 6

 1.4 Epitaxial Crystal Growth 11

 1.5 Summary 13

Ⅲ-V COMPOUND SEMICONDUCTOR FILMS FOROPTICAL APPLICATIONS

 2.1 Introduction 17

 2.2 Growth Rate/LayerThickness 20

In Situ Growth Monitors 20, Post-Growth Structural Analysis 22

 2.3 Composition Analysis 23

 2.4 Impurity and Dopant Analysis 27

 2.5 Electrical Properties in Optical Structures 28

 2.6 Optical Properties in Single and Multilayer Structures 33

 2.7 Interface Properties in Multilayer Structures 35

 2.8 Summary 37

CONTACTS

 3.1 Introduction 41

 3.2 In Situ Probes 44

Surface Preparation and Characterization 44, Initial Metal Deposition 45,

Subsequent Metal Deposition 48

 3.3 Unpatterned Test Structures 48

Electrical Characterization 48, Concentration Profiling 49,

Electron Microscopy 49

 3.4 Patterned Test Structures 51

Barrier Height 51, Contact Resistance 53, Morphology 54

DIELECTRIC INSULATING LAYERS

 4.1 Introduction 57

 4.2 Oxides and Oxidation 58

 4.3 HeteromorphicInsulators 60

 4.4 Chemical Modification of GaAs Surfaces 61

 4.5 Indium Phosphide-Insulator Interfaces 64

 4.6 Heterojunction Quasi-Insulator Interfaces 68

 4.7 Epitaxial Fluoride Insulators 72

 4.8 Commentary 74

OTHER COMPOUND SEMICONDUCTOR FILMS

 5.1 Introduction 83

A Focus on HgCdTe 83, Objective and Scope 84, Background 84,

Representative Device Structure 86

 5.2 Substrates and the CdTe Surface (Interface 1) 86

Substrate Quality 86, Substrate Surface Preparation 87

 5.3 Epitaxial HgCdTe Materials (Between Interfaces 2 and 5) 90

Desired Characteristics of the Active Layers 90, Composition 90,

Crystalline Quality 91, Doping 93, Minority Carrier Lifetime 96

 5.4 Heterojunction Interfaces (Interface 3) 98

Advantages of the Heterojunction 98, Desired Characteristics 98,

Characterizations 99

 5.5 HgCdTe Surface Preparation (Interfaces 4 and 5) 100

Importance of the Chemically Etched Surface 100, Monitoring of the Surface

Cleanliness by Ellipsometry 101, Characterization of Thin Native Oxides on HgCdTe by XPS 102, Surface Analysis by UPS 104

 5.6 Summary 105

DEEP LEVEL TRANSIENT SPECTROSCOPY: A CASE STUDY ON GaAs

 6.1 Introduction 109

 6.2 DLTS Technique: General Features 110

 6.3 Fabrication and Qualification of Schottky Diodes 111

 6.4 DLTS System 114

 6.5 DLTS Measurement Procedure 116

 6.6 Data Analysis 117

DLTS Spectrum 117, Activation Energy for Thermal Emission 118,

Trap Densities 120

 6.7 EL2 Center 121

 6.8 Summary 121

APPENDIX: TECHNIQUE SUMMARIES

 1 Auger Electron Spectroscopy (AES) 127

 2 Ballistic Electron Emission Microscopy (BEEM) 128

 3 Capacitance-Voltage (C-V) Measurements 135

 4 Deep Level Transient Spectroscopy (DLTS) 137

 5 Dynamic Secondary Ion Mass Spectrometry (D-SIMS) 139

 6 Electron Beam Induced Current (EBIC) Microscopy 140

 7 Energy-Dispersive X-Ray Spectroscopy (EDS) 146

 8 Focused Ion Beams (FIBs) 147

 9 Fourier Transform Infrared Spectroscopy (FTIR) 151

 10 Hall Effect Resistivity Measurements 152

 11 Inductively Coupled Plasma Mass Spectrometry (ICPMS) 154

 12 Light Microscopy 155

 13 Low-Energy Electron Diffraction (LEED) 156

 14 Neutron Activation Analysis (NAA) 157

 15 Optical Scatterometry 158

 16 Photoluminescence (PL) 159

 17 Raman Spectroscopy 160

 18 Reflection High-Energy Electron Diffraction (RHEED) 161

 19 Rutherford Backscattering Spectrometry (RBS) 162

 20 Scanning Electron Microscopy (SEM) 163

 21 Scanning Transmission Electron Microscopy (STEM) 164

 22 Scanning Tunneling Microscopy and Scanning Force Microscopy (STM and SFM) 165

 23 Sheet Resistance and the Four Point Probe 166

 24 Spreading Resistance Analysis (SRA) 175

 25 Static Secondary Ion Mass Spectrometry (Static SIMS) 183

 26 Surface Roughness: Measurement, Formation by Sputtering, Impact on Depth Profiling 184

 27 Total Reflection X-Ray Fluorescence Analysis (TXRF) 185

 28 Transmission Electron Microscopy (TEM) 186

 29 Variable-Angle Spectroscopic Ellipsometry (VASE) 187

 30 X-Ray Diffraction (XRD) 188

 31 X-Ray Fluorescence (XRF) 189

 32 X-Ray Photoelectron Spectroscopy (XPS) 190

Index 191