Part A Fundamentals of Crystal Growth and Defect Formation

1 Crystal Growth Techniques and Characterization:An Overview

2 Nucleation at Surfaces

3 Morphology of Crystals Grown from Solutions

4 Generation and Propagation of Defects During Crystal Growth

5 Single Crystals Grown Under Unconstrained Conditions

6 Defect Formation During Crystal Growth from the Melt

Part B Crystal Growth from Melt Techniques

7 Indium Phosphide: Crystal Growth and Defect Control by Applying Steady Magnetic Fields

8 Czochralski Silicon Single Crystals for Semiconductor and Solar Cell Applications

9 Czochralski Growth of Oxide Photorefractive Crystals

10 Bulk Crystal Growth of Ternary 111- V Semiconductors

11 Growth and Characterization of Antimony-Based Narrow-Bandgap III-V Semiconductor Crystals for Infrared Detector Applications

12 Crystal Growth of Oxides by Optical Floating Zone Technique

13 Laser-Heated Pedestal Growth of Oxide Fibers

14 Synthesis of Refractory Materials by Skull Melting Technique

15 Crystal Growth of Laser Host Fluorides and Oxides

16 Shaped Crystal Growth

Part C Solution Growth of Crystals

17 Bulk Single Crystals Grown from Solution on Earth and in Microgravity

18 Hydrothermal Growth of Polyscale Crystals

19 Hydrothermal and Ammonothermal Growth of ZnO and GaN

20 Stoichiometry and Domain Structure of KTP-Type Nonlinear Optical Crystals

21 High-Temperature Solution Growth:Application to Laser and Nonlinear Optical Crystals

22 Growth and Characterization of KDP and Its Analogs

Part D Crystal Growth from Vapor

23 Growth and Characterization of Silicon Carbide Crystals

24 A1N Bulk Crystal Growth by Physical Vapor Transport

25 Growth of Single-Crystal Organic Semiconductors

26 Growth of Ⅲ-Nitrides with Halide Vapor Phase Epitaxy(HVPE)

27 Growth of Semiconductor Single Crystals from Vapor Phase

Part E Epitaxial Growth and Thin Films

28 Epitaxial Growth of Silicon Carbide by Chemical Vapor Deposition

29 Liquid-Phase Electroepitaxy of Semiconductors

30 Epitaxial Lateral Overgrowth of Semiconductors

31 Liquid-Phase Epitaxy of Advanced Materials

32 Molecular-Beam Epitaxial Growth of HgCdTe

33 Metalorganic Vapor-Phase Epitaxy of Diluted Nitrides and Arsenide Quantum Dots

34 Formation of SiGe Heterostructures and Their Properties

35 Plasma Energetics in Pulsed Laser and Pulsed Electron Deposition

Part F Modeling in Crystal Growth and Defects

36 Convection and Control in Melt Growth of Bulk Crystals

37 Vapor Growth of Ⅲ Nitrides

38 Continuum-Scale Quantitative Defect Dynamics in Growing Czochralski Silicon Crystals

39 Models for Stress and Dislocation Generation in Melt Based Compound Crystal Growth

40 Mass and Heat Transport in BS and EFG Systems

Part G Defects Characterization and Techniques

41 Crystalline Layer Structures with X-Ray Diffractometry

42 X-Ray Topography Techniques for Defect Characterization of Crystals

43 Defect-Selective Etching of Semiconductors

44 Transmission Electron Microscopy Characterization of Crystals

45 Electron Paramagnetic Resonance Characterization of Point Defects

46 Defect Characterization in Semiconductors with Positron Annihilation Spectroscopy

Part H Special Topics in Crystal Growth

47 Protein Crystal Growth Methods

48 Crystallization from Gels

49 Crystal Growth and Ion Exchange in Titanium Silicates

50 Single-Crystal Scintillation Materials

51 Silicon Solar Cells: Materials, Devices, and Manufacturing

52 Wafer Manufacturing and Slicing Using Wiresaw

Subject Index

《晶体生长手册(第6册晶体生长专题影印版)》由德哈纳拉所著。本手册针对目前备受关注的体材料晶体和薄膜晶体的生长技术水平进行阐述。我们的目的是使读者了解经常使用的生长工艺、材料生产和缺陷产生的基本知识。为完成这一任务，我们精选了50多位顶尖科学家、学者和工程师，他们的合作者来自于22个不同国家。这些作者根据他们的专业所长，编写了关于晶体生长和缺陷形成共计52章内容：从熔体、溶液到气相体材料生长；外延生长；生长工艺和缺陷的模型；缺陷特性的技术以及一些现代的特别课题。