《模拟CMOS集成电路设计(英文版)》涵盖模拟CMOS集成电路分析、设计的完整流程,是学习模拟电路设计的入门宝典。将电路的基本概念、设计原理与实际工程应用关联,理论与实际结合,激发读者的兴趣。在阐述各种模拟电路的改进和新电路结构的产生时,着重观察和分析,不断地提出问题和解决问题。
通过学习本书对电路的严谨分析,逐步掌握用CMOS工艺技术来设计模拟电路。本书由Behzad Razavi(拉扎维)著。
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书名 | 模拟CMOS集成电路设计(英文版)/国外电子电气经典教材系列 |
分类 | 科学技术-工业科技-电子通讯 |
作者 | (美)拉扎维 |
出版社 | 机械工业出版社 |
下载 | ![]() |
简介 | 编辑推荐 《模拟CMOS集成电路设计(英文版)》涵盖模拟CMOS集成电路分析、设计的完整流程,是学习模拟电路设计的入门宝典。将电路的基本概念、设计原理与实际工程应用关联,理论与实际结合,激发读者的兴趣。在阐述各种模拟电路的改进和新电路结构的产生时,着重观察和分析,不断地提出问题和解决问题。 通过学习本书对电路的严谨分析,逐步掌握用CMOS工艺技术来设计模拟电路。本书由Behzad Razavi(拉扎维)著。 内容推荐 《模拟CMOS集成电路设计(英文版)》介绍模拟CMOS集成电路的分析与设计,着重讲解技术的最新进展和设计实例,从MOSFET器件的基本物理特性开始,逐章分析CMOS放大单元电路、差分放大器、频率响应、噪声、反馈放大器与稳定性、运算放大器、电压基准源与电流基准源、离散时间系统、差分电路及反馈系统中的非线性、振荡器和锁相环等基础模拟电路的分析与设计。 《模拟CMOS集成电路设计(英文版)》还介绍了集成电路的基本制造工艺、版图和封装设计的基本原则。本书自出版以来得到了国内外读者的好评和青睐,被许多国际知名大学选为教科书。同时,由于原著者在世界知名顶级公司的丰富研究经历,使本书也非常适合作为CMOS模拟集成电路设计或相关领域的研究人员和工程技术人员的参考书。本书由Behzad Razavi(拉扎维)著。 目录 About the Author Preface Acknowledgments 1 Introduction to Analog Design 1.1 Why Analog? 1.2 Why Integrated? 1.3 Why CMOS? 1.4 Why This Book? 1.5 General Concepts 1.5.1 Levels of Abstraction 1.5.2 Robust Analog Design 2 Basic MOS Device Physics 2.1 General Considerations 2.1.1 MOSFET as a Switch 2.1.2 MOSFET Structure 2.1.3 MOS Symbols 2.2 MOS I/V Characteristics 2.2.1 Threshold Voltage 2.2.2 Derivation of I/V Characteristics 2.3 Second-Order Effects 2.4 MOS Device Models 2.4.1 MOS Device Layout 2.4.2 MOS Device Capacitances 2.4.3 MOS Small-Signal Model 2.4.4 MOS SPICE models 2.4.5 NMOS versus PMOS Devices 2.4.6 Long-Channel versus Short-Channel Devices 3 Single-Stage Amplifiers 3.1 Basic Concepts 3.2 Common-Source Stage 3.2.1 Common-Source Stage with Resistive Load 3.2.2 CS Stage with Diode-Connected Load 3.2.3 CS Stage with Current-Source Load 3.2.4 CS Stage with Triode Load 3.2.5 CS Stage with Source Degeneration 3.3 Source Follower 3.4 Common-Gate Stage 3.5 Cascode Stage 3.5.1 Folded Cascode 3.6 Choice of Device Models 4 Differential Amplifiers 4.1 Single-Ended and Differential Operation 4.2 Basic Differential Pair 4.2.1 Qualitative Analysis 4.2.2 Quantitative Analysis 4.3 Common-Mode Response 4.4 Differential Pair with MOS Loads 4.5 Gilbert Cell 5 Passive and Active Current Mirrors 5.1 Basic Current Mirrors 5.2 Cascode Current Mirrors 5.3 Active Current Mirrors 5.3.1 Large-Signal Analysis 5.3.2 Small-Signal Analysis 5.3.3 Common-Mode Properties 5 Frequency Response of Amplifiers 6.1 General Considerations 6.1.1 Miller Effect 6.1.2 Association of Poles with Nodes 6.2 Common-Source Stage 6.3 Source Followers 6.4 Common-Gate Stage 6.5 Cascode Stage 6.6 Differential Pair Appendix A: Dual of Miller's Theorem 7 Noise 7.1 Statistical Characteristics of Noise 7.1.1 Noise Spectrum 7.1.2 Amplitude Distribution 7.1.3 Correlated and Uncorrelated Sources 7.2 Types of Noise 7.2.1 Thermal Noise 7.2.2 Flicker Noise 7.3 Representation of Noise in Circuits 7.4 Noise in Single-Stage Amplifiers 7.4.1 Common-Source Stage 7.4.2 Common-Gate Stage 7.4.3 Source Followers 7.4.4 Cascode Stage 7.5 Noise in Differential Pairs 7.6 Noise Bandwidth 8 Feedback 8.1 General Considerations 8.1.1 Properties of Feedback Circuits 8.1.2 Types of Amplifiers 8.2 Feedback Topologies 8.2.1 Voltage-Voltage Feedback 8.2.2 Current-Voltage Feedback 8.2.3 Voltage-Current Feedback 8.2.4 Current-Current Feedback 8.3 Effect of Loading 8.3.1 Two-Port Network Models 8.3.2 Loading in Voltage-Voltage Feedback 8.3.3 Loading in Current-Voltage Feedback 8.3.4 Loading in Voltage-Current Feedback 8.3.5 Loading in Current-Current Feedback 8.3.6 Summary of Loading Effects 8.4 Effect of Feedback on Noise 9 Operational Amplifiers 9.1 General Considerations 9.1.1 Performance Parameters 9.2 One-Stage Op Amps 9.3 Two-Stage Op Amps 9.4 Gain Boosting 9.5 Comparison 9.6 Common-Mode Feedback 9.7 Input Range Limitations 9.8 Slew Rate 9.9 Power Supply Rejection 9.10 Noise in 0p Amps 10 Stability and Frequency Compensation 10.1 General Considerations 10.2 Multipole Systems 10.3 Phase Margin 10.4 Frequency Compensation 10.5 Compensation of Two-Stage Op Amps 10.5.1 Slewing in Two-Stage Op Amps 10.6 Other Compensation Techniques 11 Bandgap References 11.1 General Considerations 11.2 Supply-Independent Biasing 11.3 Temperature-Independent References 11.3.1 Negative-TC Voltage 11.3.2 Positive-TC Voltage 11.3.3 Bandgap Reference 11A PTAT Current Generation 11.5 Constant-Gin Biasing 11.6 Speed and Noise Issues 11.7 Case Study 12 Introduction to Switched-Capacitor Circuits 12.1 General Considerations 12.2 Sampling Switches 12.2.1 MOSFETS as Switches 12.2.2 Speed Considerations 12.2.3 Precision Considerations 12.2.4 Charge Injection Cancellation 12.3 Switched-Capacitor Amplifiers 12.3.1 Unity-Gain S ampler/Buffer 12.3.2 Noninverting Amplifier 12.3.3 Precision Multiply-by-Two Circuit 12.4 Switched-Capacitor Integrator 12.5 Switched-Capacitor Common-Mode Feedback 13 Nonlinearity and Mismatch 13.1 Nonlinearity 13.1.1 General Considerations 13.1.2 Nonlinearity of Differential Circuits 13.1.3 Effect of Negative Feedback on Nonlinearity 13.1.4 Capacitor Nonlinearity 13.1.5 Linearization Techniques 13.2 Mismatch 13.2.1 Offset Cancellation Techniques 13.2.2 Reduction of Noise by Offset Cancellation 13.2.3 Alternative Definition of CMRR 14 Oscillators 14.1 General Considerations 14.2 Ring Oscillators 14.3 LC Oscillators 14.3.1 Crossed-Coupled Oscillator 14.3.2 Colpitts Oscillator 14.3.3 One-Port Oscillators 14.4 Voltage-Controlled Oscillators 14.4.1 Tuning in Ring Oscillators 14.4.2 Tuning in LC Oscillators 14.5 Mathematical Model of VCOs 15 Phase-Locked Loops 15.1 Simple PLL 15.1.1 Phase Detector 15.1.2 Basic PLL Topology 15.1.3 Dynamics of Simple PLL 15.2 Charge-Pump PLLs 15.2.1 Problem of Lock Acquisition 15.2.2 Phase/Frequency Detector and Charge Pump 15.2.3 Basic Charge-Pump PLL 15.3 Nonideal Effects in PLLs 15.3.1 PFD/CP Nonidealities 15.3.2 Jitter in PLLs 15.4 Delay-Locked Loops 15.5 Applications 15.5.1 Frequency Multiplication and Synthesis 15.5.2 Skew Reduction 15.5.3 Jitter Reduction 16 Short-Channel Effects and Device Models 16.1 Scaling Theory 16.2 Short-Channel Effects 16.2.1 Threshold Voltage Variation 16.2.2 Mobility Degradation with Vertical Field 16.2.3 Velocity Saturation 16.2.4 Hot Carrier Effects 16.2.5 Output Impedance Variation with Drain-Source Voltage 16.3 MOS Device Models 16.3.1 Level 1 Model 16.3.2 Level 2 Model 16.3.3 Level 3 Model 16.3.4 BSIM Series 16.3.5 Other Models 16.3.6 Charge and Capacitance Modeling 16.3.7 Temperature Dependence 16.4 Process Comers 16.5 Analog Design in a Digital World 17 CMOS Processing Technology 17.1 General Considerations 17.2 Wafer Processing 17.3 Photolithography 17.4 Oxidation 17.5 Ion Implantation 17.6 Deposition and Etching 17.7 Device Fabrication 17.7.1 Active Devices 17.7.2 Passive Devices 17.7.3 Interconnects 17.8 Latch-Up 18 Layout and Packaging 18.1 General Layout Considerations 18.1.1 Design Rules 18.1.2 Antenna Effect 18.2 Analog Layout Techniques 18.2.1 Multifinger Transistors 18.2.2 Symmetry 18.2.3 Reference Distribution 18.2.4 Passive Devices 18.2.5 Interconnects 18.3 Substrate Coupling Index |
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