本书国外电子信息精品著作(影印版)系列之一，内容丰富，从主流模型的讨论到小尺寸器件模型和量子效应的介绍，从模型参数的提取方法到模型在硬件描述语言中的应用等方面都作了详细的论述。本书对设计工程师和器件工程师都有很好的参考价值。

器件的模型一直是模拟／射频集成电路工程师关心的问题。是否能建立一个尽可能反映器件行为的模型关系到整个集成电路设计的成败。本书内容丰富，从主流模型的讨论到小尺寸器件模型和量子效应的介绍，从模型参数的提取方法到模型在硬件描述语言中的应用等方面都作了详细的论述。本书对设计工程师和器件工程师都有很好的参考价值。

Foreword

Hiroshi Iwai

Introduction

Wladek Grabinski, Bart Nauwelaers and Dominique Schreurs

1

2/3-D process and device simulation. An effective tool for better understanding of internal behavior

of semiconductor structures

Daniel Donoval, Andrej Vrbicky, Ales Chvala, and Peter Beno

2

PSP: An advanced surface-potential-based MOSFET model

R. van Langevelde, and G. Gildenblat

3

EKV3.0: An advanced charge based MOS transistor model.

A design-oriented MOS transistor compact model for next generation CMOS

Matthias Bucher, Antonios Bazigos, Francois Krummenacher,Jean-Micehl Sallese, and Christian Enz

4

Modelling using high-frequency measurements

Dominique Schreurs

5

Empirical FET models

Iltcho Angelov

6

Modeling the SOI MOSFET nonlinearities.

An empirical approach

B. Parvais, A. Siligaris

7

Circuit level RF modeling and design

Nobuyuki Itoh

8

On incorporating parasitic quantum effects in classical circuit simulations

Frank Felgenhauer, Maik Begoin and Wolfgang Mathis

9

Compact modeling of the MOSFET in VHDL-AMS

Christophe Lallement, Francois Pecheux, Alain Vachoux and Fabien Pregaldiny

10

Compact modeling in Verilog-A

Boris Troyanovsky, Patrick O'Halloran and Marek Mierzwinski

Index