本书包括半导体器件基础、二极管及其应用电路、双极性结型晶体管和场效应晶体管放大电路的基本原理及频率响应、功率放大电路、多级放大电路、差分放大电路、电流源等模拟集成电路的单元电路、反馈电路、模拟集成运算放大器、电压比较器和波形变换电路等内容。本书结合国内高等教育中采用英语或双语教学的特点和实际情况，对原版教材进行了改编，精简了内容，突出了重点，补充了必要知识点，内容更加新颖和系统化，反映了半导体器件和应用的发展趋势，强调了系统工程的概念。

Chapter 1 Semiconductor Diodes
1.1 Introduction
1.2 Semiconductor Materials: Ge, Si, and GaAs
1.3 Covalent Bonding and Intrinsic Materials
1.4 Extrinsic Materials: n-Type and p-Type Materials
1.5 Semiconductor Diode
1.6 Ideal versus Practical
1.7 Resistance Levels
1.8 Diode Equivalent Circuits
1.9 Transition and Diffusion Capacitance
1.10 Reverse Recovery Time
1.11 Diode Specification Sheets
1.12 Semiconductor Diode Notation
1.13 Zener Diodes
1.14 Light-Emitting Diodes
1.15 Summary
1.16 Computer Analysis
Problems
Chapter 2 Diode Applications
2.1 Introduction
2.2 Load-Line Analysis
2.3 Equivalent Model Analysis
2.4 AND/OR Gates
2.5 Sinusoidal Inputs, Half-Wave Rectification
2.6 Full-Wave Rectification
2.7 Clippers
2.8 Clampers
2.9 Zener Diodes
2.10 Summary
Problems
Chapter 3 Bipolar Junction Transistors
3.1 Introduction
3.2 Transistor Construction
3.3 Transistor Operation
3.4 Common-Base Configuration
3.5 Transistor Amplifying Action
3.6 Common-Emitter Configuration
3.7 Common-Collector Configuration
3.8 Limits of Operation
3.9 Transistor Specification Sheet
3.10 Transistor Casing and Terminal Identification
3.11 Summary
Problems
Chapter 4 DC Biasing —BJTs
4.1 Introduction
4.2 Operating Point
4.3 Fixed-Bias Circuit
4.4 Emitter Bias
4.5 Voltage-Divider Bias
4.6 DC Bias with Voltage Feedback
4.7 Miscellaneous Bias Configurations
4.8 Transistor Switching Networks
4.9 pnp Transistors
4.10 Bias Stabilization
4.11 Summary
Problems
Chapter 5 BJT AC Analysis
5.1 Introduction
5.2 Amplification in the AC Domain
5.3 BJT Transistor Modeling
5.4 The re Transistor Model
5.5 The Hybrid Equivalent Model
5.6 Hybrid π Model
5.7 Variations of Transistor Parameters
5.8 Common-Emitter Fixed-Bias Configuration
5.9 Voltage-Divider Bias
5.10 CE Emitter-Bias Configuration
5.11 Emitter-Follower Configuration
5.12 Common-Base Configuration
5.13 Collector Feedback Configuration
5.14 Collector DC Feedback Configuration
5.15 Determining the Current Gain
5.16 Effect of RL and Rs
5.17 Two-Port Systems Approach
5.18 Summary Table
5.19 Cascaded Systems
5.20 Darlington Connection
5.21 Feedback Pair
5.22 Current Mirror Circuits
5.23 Current Source Circuits
5.24 Approximate Hybrid Equivalent Circuit
5.25 Summary
Problems
Chapter 6 Field-Effect Transistors
6.1 Introduction
6.2 Construction and Characteristics of JFETs
6.3 Transfer Characteristics
6.4 Specification Sheets (JFETs)
6.5 Important Relationships
6.6 Depletion-Type MOSFETs
6.7 Enhancement-Type MOSFETs
6.8 CMOS
6.9 Summary Table
6.10 Summary
Problems
Chapter 7 FET Biasing
7.1 Introduction
7.2 Fixed-Bias Configuration
7.3 Self-Bias Configuration
7.4 Voltage-Divider Biasing
7.5 Depletion-Type MOSFETs
7.6 Enhancement-Type MOSFETs
7.7 Summary Table
7.8 Combination Networks
7.9 p-Channel FETs
7.10 Summary
Problems
Chapter 8 FET Amplifiers
8.1 Introduction
8.2 FET Small-Signal Model
8.3 JFET Fixed-Bias Configuration
8.4 JFET Self-Bias Configuration
8.5 JFET Voltage-Divider Configuration
8.6 JFET Source-Follower (Common-Drain) Configuration
8.7 JFET Common-Gate Configuration
8.8 Depletion-Type MOSFETs
8.9 Enhancement-Type MOSFETs
8.10 E-MOSFET Drain-Feedback Configuration
8.11 E-MOSFET Voltage-Divider Configuration
8.12 Summary Table
8.13 Effect of RL and Rsig
8.14 Cascade Configuration
8.15 Summary
Problems
Chapter 9 BJT and FET Frequency Response
9.1 Introduction
9.2 General Frequency Considerations
9.3 Low-Frequency Analysis — Bode Plot
9.4 Low-Frequency Response — BJT Amplifier
9.5 Low-Frequency Response — FET Amplifier